Courses Silicon Thin Film Transistors

Silicon Thin Film Transistors on Transparent and Flexible Substrate

June 11th - June 15th 2012 REGISTRATION
APPLICATION for SCHOLARSHIP

Université de Rennes

 

Université de Rennes

Today many works are devoted to produce flexible electronics. Major perspectives are flat and flexible screens, intelligent textiles and clothes, RFID labels able to replace the barcode identification system, and some biological applications such as bio-patches dedicated to be stuck on organs. The main goal of this training is to learn how to process on such flexible substrates. In that way, the practice consists in fabricating on flexible substrate and characterizing thin film transistor (TFT) that is the elementary element of any electronics.

This course fulfills all the criteria imposed by the FP7 EURO-DOTS program, and has been provisionally granted the EURO-DOTS label. PhD students fulfilling the requirements can apply for a scholarship. Details on the FP7 EURO-DOTS program, these requirements and the application procedure can be found on Students >> Rules.

WHO SHOULD ATTEND?

The course is primarily aimed to PhD students and researchers from European Universities and Research Institutes who want to learn or increase their skills on the microelectronic technology on flexible substrate. Professionals from European Companies that have the same need are also welcome. Due to the limiting possibilities in the clean room, the maximal audience is limited to a minimum of 4 attendees and a maximum of 8 attendees.

 

COURSE LOCATION

The course will take place at Université de Rennes

IETR
Bâtiment 11D
Avenue Jean Perrin
Campus de Beaulieu
35042 Rennes Cedex

FEES AND REGULATIONS

Attendance is kept low in order to lower the barrier for members of universities and research institutes. However, a fee will be required to cover a small part of the known high cost of the technology.
  • Attendance fee : 1 000 € for PhD students.
  • Fees exclude VAT which will be invoiced subject to national regulations.
  • Fees include the lecture and the attendance to the training in the clean room, all the materials needed for the lecture and the training, the five days lunches and refreshment breaks, and the social event dinner
  • Fees include also a help for lodging arrangements in the University at moderate cost.
  • Transport, accommodation and other meals are not included in the fees.

PROGRAM

The training starts with 3 hours lecture on the technological steps regarding the low temperature need and on the expected influence of the flexibility of the substrate on the TFT’s properties. Then the practical training is divided into partsTFTs are processed in clean room, directly on transparent plastic substrate at a maximum temperature of 180°C, compatible with the m echanical properties of the substrate. The training is divided in several technological and analysis parts listed below:
  • PECVD Deposition: undoped microcrystalline silicon, N or P doped microcrystalline silicon, silicon nitride
  • E-beam deposition of metals
  • 4 photolithography steps (4 mask levels)
  • Electrical and Physical characterizations during the process:
    • ellipsometry
    • 4-probes resistivity
    • I-V and C-V characteristics
  • Electrical characterizations after the process:
    • TFT’s parameters analysis (Agilent B1500)
    • Study of the effect of the flexibility of the substrate

 

 

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